A Novel Active Gate Driver with Auxiliary Gate Current Control Circuit for Improving Switching Performance of High-Power SiC MOSFET Modules
编号:218 访问权限:仅限参会人 更新:2020-10-29 12:38:01 浏览:317次 口头报告

报告开始:2020年11月02日 14:30(Asia/Shanghai)

报告时间:15min

所在会场:[B] Power Electronics Technology and Application [B1] Session 3 and Session 8

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摘要
Silicon carbide (SiC) MOSFETs are gaining increasing usage in industrial applications demanding for higher power density and lower power dissipation. Despite the high switching rate nature of this device, some problems, including intensified oscillations, overshoots, electromagnetic interference (EMI) and possible additional losses, do arise. In this paper, a new active gate driver (AGD) with Auxiliary Gate Current Control (AGCC) unit is proposed. To optimize the switching transients, the gate current is regulated throughout the whole switching process by adjustment of the AGCC reference voltage. Advantageously, this regulation is effective both for normal operation and short-circuit fault conditions. Extensive empirical results on a 1.2kV, 300A SiC MOSFET confirmed performance improvement achieved by the proposed AGD, especially on the suppression of induced overshoots and oscillations.
 
关键词
SiC-MOSFET,Active Gate Driver,CPLD,Overshoots,Oscillations
报告人
Chengfei Geng
Harbin Institute of Technology Shenzhen

稿件作者
Chengfei Geng Harbin Institute of Technology Shenzhen
Donglai Zhang Harbin Institute of Technology Shenzhen
Xuanqin Wu Shenzhen INVT Electric Co., Ltd.
Wen Shen Shenzhen INVT Electric Co., Ltd.
Ruiyong Dong Shenzhen INVT Electric Co., Ltd.
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重要日期
  • 会议日期

    11月02日

    2020

    11月04日

    2020

  • 10月27日 2020

    初稿截稿日期

  • 11月03日 2020

    报告提交截止日期

  • 11月04日 2020

    注册截止日期

  • 11月17日 2020

    终稿截稿日期

主办单位
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
承办单位
Huazhong University of Science and Technology
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