时刻表 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia WIPDA-ASIA 2021

时刻表

时区：Asia/Shanghai

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第3天2021年08月27日星期五

P1	编号	标题
P1	Poster 1@Poster 2021年08月27日 12:00~13:30 虚拟会议张贴报告时刻表 V4 发布时间：2021-08-26 10:02:05
P1-WBG Devices
Chair: Guorong Zhu, Wuhan University of Technology / Zhen Tian, Wuhan University
20	High Breakdown Voltage AlGaNGaN HEMT with Graded Fluorine Ion Implantation Terminal in Thick Passivation Layer Siyu Deng/University of Electronic Science and Technology of China 张贴报告
26	Low Roughness SiC Trench Formed by ICP Etching with Sacrificial Oxidation and Ar Annealing Treatment Changwei Zheng SiC Process Technolo/Zhuzhou CRRC Times Semiconductor Co. Ltd. 张贴报告
35	The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC Ruijun Zhang/XiaMen University,Department of Physics 张贴报告
56	Deep energy levels investigation on high resistivity bulk monocrystalline diamond Yutian Wang/Xidian University 张贴报告
2	650V 4H-SiC VDMOS with Additional N Region_A Simulation Study Xiuxiu Gao/CORESING SEMICONDUCTOR TECHNOLOGY CO . LTD 张贴报告
15	A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness Chongyu Jiang graduate student/Zhejiang University 张贴报告
31	Comparison of Gate Leakage Current in AlGaN/GaN HEMTs with Different Passivation Technology Jielong Liu Doctor/Xidian University 张贴报告
57	Off-State Negative Differential Capacitance in Low-Temperature AlGaN/GaN Heterostructures Siyu Liu Doctor/Xidian University 张贴报告
21	Influence of the Interface Traps Distribution on I-V and C-V Characteristics of SiC MOSFET Evaluated by TCAD Simulations yumeng cai/North China Electric Power University 张贴报告
25	Research on threshold voltage hysteresis of D-mode and fully recessed E-mode AlGaN/GaN MIS-HEMTs with HfO₂ dielectric Zicheng Yu/Shanghai University 张贴报告
148	Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode zhanwei shen/Institute of Semiconductors, Chinese Academy of Sciences 张贴报告

P5	编号	标题
P5	Poster 5@Poster 2021年08月27日 12:00~13:30 虚拟会议张贴报告时刻表 V4 发布时间：2021-08-26 10:02:05
P5-WBG Device Applications
Chair: Song Xiong, Wuhan University of Technology / Deliang Wu, Shanghai University
22	Design of a High Power Density Bidirectional AC/DC Converter Based on GaN Jiajia Guan/Huazhong University of Science and Technology 张贴报告
12	Dual-Side Three-stage Asymmetric Phase Shift Strategy for Bidirectional Inductive Power Transfer System with SiC Power Module Haowen Chen student/Huazhong University of Science and Technology,School of Electrical and Electronic Engineering 张贴报告
40	A GaN-based High Power-density Power Optimizer for Solar-powered Aircraft Applications peng chen/Nanjing University of Aeronautics and Astronautics,College of Automation 张贴报告
64	Over-Voltage and Oscillation Suppression Circuit with Switching Losses Optimization and Clamping Energy Feedback for SiC MOSFET Yang ChengZi/Xi’an Jiaotong University 张贴报告
33	Improved One Cycle Control for Three-Phase Three-Wire VIENNA Rectifier Junnan Gu/Shanghai University 张贴报告
18	Design Methodology of SiC MOSFET Based Bidirectional CLLC Resonant Converter for Wide Battery Voltage Range Mingjie Liu/State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan, P. R. China 张贴报告
54	Research on A Novel Parallel Resonant DC Link Soft-switching Inverter Based on SiC MOSFET Si Li doctoral candidate/Harbin Institute of Technology 张贴报告
32	Research on strategy of parallel wide range bidirectional DC DC converter Zehui Peng/Shanghai University 张贴报告
29	Soft Precharging Method for Four-Level Hybrid-Clamped Converter Yihui Zhao/Chongqing university 张贴报告
23	Active Magnetic Bearing Amplifier Design based on SiC Devices Gang Cao/Huazhong University of Science and Technology 张贴报告
30	Design and Verification of Gate Driver for 6.5 kV SiC MOSFET Module Yijian Wang/Huazhong University of Science and Technology 张贴报告
52	A Novel ACDC Single-Phase Bridgeless SEPIC PFC Converter With Reduced Conduction Losses and Simple Structure Xiang Lin/Shanghai University 张贴报告
68	Power Cycling Capabilities of Bond Buffer Technologies for Wide Bandgap Power Devices Nan Jiang/Guangdon Academy of Sciences 张贴报告
8	DC Transform Circuit Design Based on Multiplier Rectification Penghui Yin/Huazhong University of Science and Technology,State Key Laboratory of Advanced Electromagnetic Engineering and Technology 张贴报告
46	LLC Resonant Converter Based on Trench Gate SiC MOSFET Jinkun Chu/Anhui University of Technology 张贴报告
59	Fractional-Order Model Predictive Control of SiC PFC Converter Qihui Fu/Hunan University 张贴报告
49	Mode Switchover Strategy for Multi-port Energy Router Based on State Flow Diagram Zhiguo Wei/,China University of Geosciences (Wuhan) 张贴报告
42	An Integrated GaN-Based Power Module Based on the Cooling-System-Inductor Structure Longyang Yu/Xi'an Jiaotong University 张贴报告
81	An Intergrated Buck-Boost Converter with SRC for Wide Input Voltage Yanqing Wang/China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology 张贴报告

P4	编号	标题
P4	Poster 4@Poster 2021年08月27日 12:00~13:30 虚拟会议张贴报告时刻表 V4 发布时间：2021-08-26 10:02:05
P4-WBG Device Reliability
Chair: Yi Liu, Wuhan University of Technology / Donghai Zhu, Huazhong University of Science and Technology
53	Comparison of the Influence of Reverse Conduction on EMI of WBG And Si Devices Ru Zhang/School of Electrical Engineering, Xi’an Jiaotong University 张贴报告
4	An Improved Desaturation Protection Method with Self-Adaptive Blanking-Time for Silicon Carbide (SiC) Power MOSFETs Jiawei Li/Huazhong University of Science and Technology 张贴报告
63	Degradation behavior and mechanism of SiC power MOSFETs by total ionizing dose irradiation under different gate voltages Kexin Gao/Xiangtan University 张贴报告
9	Single-Pulse Avalanche Failure Characterization of Single and Paralleled SiC MOSFETs Hua Mao/Chongqing university 张贴报告
14	Modeling and Experimental Verification of Common Mode Crosstalk with Shield Cables in Power Converter System Ruizhou Xue/Huazhong University of Science and Technology 张贴报告
39	Influence of CucorAl wire bonding on reliability of SiC devices Fang Chao/Zhuzhou CRRC Times Semiconductor Co., Ltd. 张贴报告
27	Short-circuit Protection Circuit of SiC MOSFET Based on Drain-source Voltage Integral Zhidong Qiu/Beijing Jiaotong University 张贴报告
60	Design of Aging Test System for SiC MOSFET Modules Chaoyue Shen Student/Shanghai University,School of Mechatronic Engineering and Automation 张贴报告
50	Degradation mechanism of AlGaN/GaN HEMT based on high temperature reverse bias stress Meng Lu/Xiangtan University 张贴报告
48	A Dynamic Current Sharing Method in Multi-chip SiC Power Module Using Stacked DBC Bridges and Decoupling Capacitors Based on the Original Simple Module Layout Jianwei Lv/Huazhong University of Science and Technology 张贴报告
36	EMI Noise Reduction in GaN-based Full-bridge LLC Converter Yue Cao Student/Xi'an Jiaotong University 张贴报告

P3	编号	标题
P3	Poster 3@Poster 2021年08月27日 12:00~13:30 虚拟会议张贴报告时刻表 V4 发布时间：2021-08-26 10:02:05
P3-WBG Device Modeling
Chair: Zhijian Fang, China University of Geosciences / Hao Feng, Chongqing University
43	Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions Yu Sun/Institute of Microelectronics, Peking University；Chun Han/Peking University 张贴报告
44	Design, Fabrication and Characterization of 6.5 kV/100A 4H-SiC PiN Rectifier Mengling Tao/University of Electronic Science and Technology of China 张贴报告
13	Analytical Averaged Loss Model of a Three-level NPC-type Converter With SiC Devices Xinyue Guo/Huazhong University of Science and Technology,School of Electrical and Electronic Engineering 张贴报告
66	An Accurate Crosstalk Evaluation and Prediction Method for SiC MOSFET Considering Nonlinear Capacitance and Stray Parameters Huaqing Li student/Xi'an Jiaotong University 张贴报告
7	The Influence of Gate Resistances on the Turn-on Behaviors of Si/SiC Hybrid Switch Xiaofeng Jiang/Chongqing university 张贴报告
69	Modeling and comparison of switching loss between SiC MOSFETs with current source and voltage source gate driver Quan Zheng/Huazhong University of Science and Technology,School of Electrical and Electronic Engineering 张贴报告
45	Modeling and Analysis of the Switching Characteristics Difference for Paralleling SiC MOSFETs in Multichip Power Modules Wenyu Li/Fudan University, China, Shanghai, 200433 张贴报告
10	Power Loss Characterictics comparsion of the Modular Multilevel Multilevel Converter Based on Based on Si IGBT and SiC MOSFET Tianxiang Yin/Huazhong University of Science and Technology 张贴报告
41	A Survey on Modeling of SiC IGBT Yuwei Wu/Xi’an Jiaotong University 张贴报告
47	Automated SiC MOSFET Power Module Switching Characterization Test Platform Shuhao Yang/Fudan University 张贴报告
67	Modeling and Suppression of Crosstalk of SiC MOSFET in Bidirectional Buck/Boost Converter Hao Zhang/TAIYUAN UNIVERSITY OF TECHNOLOGY 张贴报告
61	A Lossless and Passive Voltage Spikes Clamping Circuit for SiC HERIC Inverter Yong Li/Huazhong University of Science and Technology 张贴报告
62	Investigation on Parameter Extraction for An Improved Fourier-Series-Based NPT IGBT Model Yifei Ding/Hunan University 张贴报告

P2	编号	标题
P2	Poster 2@Poster 2021年08月27日 12:00~13:30 虚拟会议张贴报告时刻表 V4 发布时间：2021-08-26 10:02:05
P2-WBG Device Packaging
Chair: Yi Liu, Huazhong University of Science and Technology / Qingqing He, Wuhan University of Technology
24	Electrical Insulation Packaging for High Voltage High Power IGBT Modules using Nonlinear Conductivity Composites Kaixuan Li Doctoral Candidate/XJTU 张贴报告
28	Design and Research on Package Insulation of Highvoltage Silicon Carbide Module Yang Zhou/Global Energy Interconnection Research Institute Co.,Ltd 张贴报告
55	Power Semiconductor IGBT Packaging Technology and Reliability Yameng Sun student/Wuhan University 张贴报告
17	Evaluating Switching Performance of GaN HEMT Using Analytical Modeling Yingzhe Wu/University of Electronic Science and Technology of China 张贴报告
34	Comparative Study of Thermal Performance of a SiC MOSFET Power Module Integrated with Vapor Chamber for Traction Inverter Applications Wei Mu/Xi'an Jiaotong University 张贴报告
38	The Method for Decoupling the Parasitic Inductance of the Laminated Busbar with SiC MOSFETs in Parallel Shaolin Yu/HeFei University of Technology 张贴报告
19	A Low Winding Loss Magnetic Circuit Structure Design of Planar Inductance for GaN-based Totem-Pole PFC Pengyuan Ren/School of Electrical Engineering, Xi'an Jiaotong University 张贴报告
58	GaN HEMT with current-driven gate and its driving circuit design Qingliang Song principal engineer/Infineon Technologies 张贴报告
51	Ultra-thin Coupled Inductor for a GaN-Based CRM Buck Converter Ming Hua/Nanjing Research Institute of Electronics Technology 张贴报告
3	A Compact 175℃ High Temperature Gate Driver with Isolated Power Supply and Advanced Protection for HybridPACK Drive SiC Power Module Cheng Qian/Huazhong University of Science and Technology 张贴报告
6	An Optimal Design Scheme of Intermediate Bus Voltage for two-stage LLC Resonant Converter Based on SiC MOSFET feng wang/Huazhong University of Science and Technology,State Key Laboratory of Advanced Electromagnetic Engineering and Technology 张贴报告

重要日期

会议日期

08月25日

2021

至

08月27日

2021
04月21日 2021

摘要截稿日期
05月15日 2021

摘要录用通知日期
06月25日 2021

终稿截稿日期
08月24日 2021

报告提交截止日期
08月27日 2021

注册截止日期

主办单位

IEEE
IEEE ELECTRONIC DEVICE SOCIETY

承办单位

Huazhong University of Science and Technology

联系方式

Dr. 刘老师
li******@vip.163.com

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历届会议

2025年08月15日中国 Beijing
The 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
2025年08月15日中国 Beijing
2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
2023年08月27日台湾-中国 Hsinchu
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
2018年05月17日中国 xian
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

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IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

时刻表

第3天2021年08月27日星期五

Poster 1@Poster

Poster 5@Poster

Poster 4@Poster

Poster 3@Poster

Poster 2@Poster

重要日期

会议日期

主办单位

承办单位

联系方式

历届会议