A New V-groove Trench SiC-MOSFET and an Improved Circuit Pattern for a Low-Los High-Power Single-Ended Wireless EV Charger
            
                编号:252
                访问权限:仅限参会人
                                    更新:2021-12-03 10:53:10                浏览:843次
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                摘要
                In this paper, we propose a new SiC-VMOSFET single-ended converter that realizes a low-cost, compact and lightweight wireless EV charger, which is the key device for the popularization of electric vehicles in recent years. A three-fold  transfer power and 1/6  power device loss have been achieved by an improved drive pattern, a newly developed V-groove trench SiC-MOSFET, and a new type of low switching loss circuit topology.
In this paper, we propose a new SiC-VMOSFET single-ended converter that realizes a low-cost, compact and lightweight wireless EV charger, which is the key device for the popularization of electric vehicles in recent years. A three-fold  transfer power and 1/6  power device loss have been achieved by an improved drive pattern, a newly developed V-groove trench SiC-MOSFET, and a new type of low switching loss circuit topology.
             
            
                关键词
                Single-Ended,SiC,Electric Vehicle,Wireless Power Transfer,Charger,V-groove trench
             
            
            
                    稿件作者
                    
                        
                                    
                                        
                                                                            
                                    Shougo Hirooka
                                    Osaka Institute of Technology
                                
                                    
                                                                                                                        
                                    Hideki Omori
                                    Osaka Institute of Technology
                                
                                    
                                                                                                                        
                                    Kunihiro Sakamoto
                                    National Institute of Advanced Industrial  Science and Technology
                                
                                    
                                                                                                                        
                                    Toshimitsu Morizane
                                    Osaka Institute of Technology
                                
                                    
                                                                                                                        
                                    Hidehito Matayoshi
                                    Osaka Institute of Technology
                                
                                             
                          
    
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