摘要详情

ID / 提交时间

291 / 2024-10-14 16:04:13

标题

Design and research of detection and current limiting integrated DC solid state circuit breaker

关键字

SiC MOSFET, SSCB, short circuit protection, parametric analysis

主题及专题

4)Semi-conductor switching technology (including HV DC)

状态

全文录用

作者

Yuan Liu / Chongqing University

YaXiong Tan / Chongqing University

JunHao Guo / Chongqing University

摘要

DC Solid State Circuit Breaker(SSCB) have broad application prospects due to their arc-free operation, rapid interruption capabilities, and exceptionally long lifespans. Building upon traditional DCSSCBs, this paper proposes an integrated DCSSCB technology based on silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs), which combines detection and current-limiting functions. The current-limiting unit can effectively suppress instantaneous high-current surges, enhancing the short-circuit withstand time of the DCSSCB and significantly extending its operational lifespan. The detection module operates without sensors, reducing the delay time during interruption. Additionally, the integration of the detection module and the current-limiting module minimizes the overall size of the circuit breaker. The proposed DCSSCB topology was modeled using simulation software, and the impact of various circuit parameters on interruption performance was analyzed. Finally, under 500V/50A conditions, the interruption process during a load short-circuit fault was simulated. The results show that the proposed topology effectively suppresses transient load over-voltages, limits the short-circuit current to approximately 180 A, and achieves a total short-circuit fault clearing time of less than 8 µs, thereby validating the speed and feasibility of the proposed DCSSCB.