报告详情
Degradation Monitoring and its Mechanism Analysis of SiC Power MOSFETs Subjected to Repetitive Surge Stress on the Base of Current Transient Feature
编号：70
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更新：2025-10-11 22:40:21 浏览：1次
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摘要
In this paper, a degradation monitoring method based on the current switching rate of SiC power MOSFETs in power supplies is proposed. Theoretical analysis establishes a correlation between the degradation of transconductance in SiC power MOSFETs and current transient characteristics. The impact of degradation is observed through the output voltage of a current switching rate sensor in a non-invasive manner. Degraded devices are subjected to repetitive surge current stress, and an experimental platform based on a BOOST circuit simulates real operating conditions. Comparative analysis of the turn-on current switching rate characteristics before and after degradation reveals a significant reduction in the peak value of the current switching rate following surge current stress. The results demonstrate that the current switching rate can effectively reflect device degradation and can serve as an early indicator for online monitoring of chip and package degradation in SiC power MOSFETs.
关键词
SiC power MOSFETs, health condition monitoring, surge current.
报告人
帆一 杨
学生 工信部电子第五研究所稿件作者
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重要日期
-
会议日期
11月07日
2025
至11月09日
2025
-
10月12日 2025
初稿截稿日期
-
10月20日 2025
注册截止日期
主办单位
IEEE西南交通大学IAS学生分会
承办单位
西南交通大学电气工程学院
SPACI车网关系研究室
四川大学电力系统稳定与高压直流输电研究团队
SPACI车网关系研究室
四川大学电力系统稳定与高压直流输电研究团队
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