活动简介

The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the field of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano-electronic structures.

The University of Granada is proud to host the conference in year 2022. Details on invited speakers, technical program and social program will be posted here as soon as  they are available.

Two satellite workshops will be offered on the day before the main conference starts (Monday, September 5): Modeling and characterization of 2D materials for More than Moore applications and Monte Carlo simulation: Beyond Moore’s Law. There are still available slots for Tutorials or Workshops on September 5 or September 9, please contact us if you are interested in organizing one.

We hope to see you in Granada in September.

Francisco Gámiz – Conference Chair
Cristina Medina – TPC co-Chair

Sponsor Type:1; 9

征稿信息

征稿范围

High-quality contributions in the following areas are solicited:

  • Modeling and simulation of all types of semiconductor devices, including FinFETs, GAA FETs, ultra-thin SOI devices, emerging memory devices, new material-based nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices, spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic devices
  • Modeling and simulation of all sorts of semiconductor processes, including first principles material design, and growth simulation of nano-scale fabrication
  • Fundamental aspects of device modeling and simulation, including quantum transport, thermal transport, fluctuation, noise, and reliability
  • Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications
  • Process/device/circuit co-simulation in context with system design and verification
  • Equipment, topography, lithography modeling
  • Interconnect modeling, including noise and parasitic effects
  • Numerical methods and algorithms, including grid generation, user-interface, and visualization
  • Metrology for the modeling of semiconductor devices and processes
  • Multiscale approach from First Principles to TCAD simulations
  • Estimation with TCAD and machine learning
  • Neuromorphic devices and quantum computing
  • Multi-physics simulation

作者指南

Registration on the conference website is required to submit an abstract. After registration (or login), you will find the “Submit a Paper” button in your personal information panel.

  • Abstracts are limited to two A4 pages including tables and figures.
  • Abstracts must be submitted in PDF format.
  • Abstracts sent by e-mail or postal mail will NOT be considered

The abstract submission deadline is April 8.

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重要日期
  • 会议日期

    09月06日

    2022

    09月08日

    2022

  • 09月08日 2022

    注册截止日期

主办单位
IEEE Electron Devices Society
University of Granada-Dept of Electronics and Computer Technology
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