The Compound Semiconductor Week (CSW) is the premier forum for science, technology, and applications of compound semiconductors. CSW2022will be held in person at the University of Michigan at Ann-Arbor, Michigan.
CSW 2022 continues the tradition of bringing together the compound semiconductor community to discuss the most recent advances in the field. After the successful meetings in Stockholm, Sweden in 2021 (held virtually due to Covid-19), Nara, Japan (2019), and Boston, USA in 2018, CSW comes back to the US, to the beautiful college town of Ann Arbor, Michigan, a perfect setting to reunite the semiconductor community. As in previous years, CSW combines both the International Symposium on Compound Semiconductors (ISCS, now in its 48th year) and International Conference on Indium Phosphide and Related Materials (IPRM, now in its 33rd year) conferences into a single integrated event.
Committees
Tomas Palacios
Massachusetts Institute of Technology, Ex-Officio member, Immediate past General Chair of CSW-US
Grace Xing
Cornell University, General Chair, Immediate past Technical Chair of CSW-US
Zetian Mi, University of Michigan, Technical Chair
Patrick Fay
University of Notre Dame, Vice Technical Chair
Pei-Cheng Ku
University of Michigan, Local Organization Chair
Parag Deotare
University of Michigan, Hybrid Platform Organization Chair
CSW-2022 Technical Program Sub-Committees
1. Materials and Characterization
1.1 Narrow bandgap materials
Ganesh Balakrishnan (Chair) University of New Mexico
Seth Bank University of Texas at Austin
Jun Tatebayashi Osaka University
Kurt Eyink AFRL
Holger Eisele TU Berlin
Gary Wicks University of Rochester
Preston Webster AFRL
1.2 Nanostructures
Hieu Nguyen (Chair) New Jersey Institute of Technology
Tao Wang Sheffield University
Andreas Waag Technische Universität Braunschweig
Lan Fu Australian National University
George Wang Sandia National Labs
Fumitaro Ishikawa Ehime University
1.3 Novel materials and characterization
Parag Deotare (Chair) University of Michigan
Can Bayram UIUC
Robert Hovden University of Michigan
Javad Shabani New York University
Austin J. Minnich Caltech
1.4 Wide and ultra-wide bandgap materials
Ramon Collazo (Chair) North Carolina State University
Ronny Kirste Adroit Materials, Inc.
Robert Nemanich ULTRA EFRC, Arizona State University
Robert Kaplar Sandia National Labs
André Strittmatter OVG-University of Magdeburg
Markus Wagner TU Berlin
Yoshinao Kumagai Tokyo University of Agriculture and Technology
2. Devices and Technologies
2.1 High-frequency devices
Farid Medjdoub (Chair) IEMN – CNRS, France
Martin Kuball University of Bristol, UK
NG Geok NTU, Singapore
Merlyne Desouza University of Sheffield, UK
Niklas Rorsma Chalmers University, Sweden
2.2 Power electronics
Rongming Chu (Chair) Pennsyilvania State University
Woongje Sung SUNY Poly
Travis Anderson Naval Research Lab
Kelson Chabak Air Force Reseach Lab
Andrei Vescan RWTH Aachen
Man-Hoi Wong UMass Lowell
Elahen Ahmadi University of Michigan
2.3 Semiconductor lasers and LEDs
Nelson Tansu (Chair) University of Adelaide
2.4 Optoelectronics and Integrated Photonics
Shamsul Arafin (Chair) The Ohio State University
Takashi Asano Kyoto University, Japan
Sarvagya Dwivedi imec, Belgium
Xiaohang Li King Abdullah University,
Songtao Liu Intel, USA
Zhenguo Lu National Research Council, Canada
3. Physics and Emerging Devices
3.1 Semiconductor physics
Siddharth Rajan (Chair) Ohio State University
Andrew Armstrong Sandia National Laboratory
Nicolas Grandjean École Polytechnique Fédérale de La
Tamotsu Hashizume University of Hokkaido
Debdeep Jena Cornell University
Gregor Koblmuller Technical University of Munich
Tetsuya Takeuchi Meijo University
Shengbai Zhang Renssalaer Polytechnic Institute
3.2 Organic semiconductors and flexible electronics
John Kymissis (Chair) Columbia University
3.3 Other novel device concepts including ferroelectrics, spintronics etc.
Peide Ye (Chair) Purdue University
Uttam Singisetti University of Buffalo
Xiuling Li University of Texas
Asif Khan Georgia Institute of Technology
3.4 Quantum electronic and photonic devices
P.C. Ku (Chair) University of Michigan
Brandon Demory Lawrence Livermore National Lab
Joel Grim Naval Research Lab
Sheng-Di Lin National Chiao-Tung University
Mark Holmes University of Tokyo
Khaled Mnaymneh National Research Council, Canada
Rachel Oliver University of Cambridge
Sharif Sadaf Université du Québec
IPRM Steering Committee Members
Mattias Hammar (Royal Institute of Technology, Sweden)(Chair)
Shinji Matsuo (NTT, Japan)
Tomas Palacios(MIT, USA)
Huili (Grace) Xing (Cornell University, USA)
Shigehisa Arai(Tokyo Tech, Japan)
Hajime Asahi(Osaka Univ., Japan)
Sophie Bouchoule(CNRS-LPN, France)
Takatomo Enoki(NTT, Japan)
Norbert Grote(Fraunhofer HHI, Germany)
Sebastian Lourdudoss(Royal Institute of Technology, Sweden)
Yuichi Matsushima(Waseda Univ., Japan)
Yasuyuki Miyamoto(Tokyo Tech, Japan)
Yoshiaki Nakano(Univ. Tokyo, Japan)
Abderrahim Ramdane(CNRS-LPN, France)
Mark Rodwell(UCSB, USA)
Andre Scavennec(Alcatel Thales III-V Lab, France)
Osamu Wada(Kobe Univ., Japan)
ISCS Steering Committee Members
Eric Tournié (Univ. Montpellier, France)(Chair)
Yasuhiko Arakawa (Univ. Tokyo, Japan)
Colombo Bolognesi (ETH, Switzerland)
James Coleman (Univ. Texas Dallas, USA)
Shizuo Fujita (Kyoto Univ., Japan)
Nicolas Grandjean (EPFL, Switzerland)
James S. Harris (Stanford Univ., USA)
Yoshiro Hirayama (Tohoku Univ., Japan)
Diana Huffaker (Univ. Texas Arlington, USA)
H.S. Jeon (Seoul National Univ., South Korea)
Umesh Mishra (UCSB, USA)
Henning Riechert (Paul Drude Inst., Germany)
Tom Tiedje (Univ. British Columbia, Canada)
Martin Walther (Fraunhofer-Inst., Germany)
Hiroshi Yamaguchi (NTT, Japan)
We are looking forward to receiving your abstracts with the most recent and exciting developments on compound semiconductors. As in previous years, Wiley’s physica status solidi (a) will publish a special issue with selected papers from CSW 2022. More information will be sent to presenters after the paper selection.
1. Materials and Characterization
1.1 Narrow bandgap semiconductors (antimonides, phosphides, arsenides, etc.)
1.2 Nanostructures (quantum dots, nanowires, 2D materials, etc.)
1.3 Novel materials and characterization (nanocarbon, Perovskites, BaSnO3, quantum materials, etc.)
1.4 Wide and ultra-wide bandgap materials (GaN, Ga2O3, Sc-III-N, AlN, BN, Diamond, SiC, etc.)
2. Devices and Technologies
2.1 High-frequency devices
2.2 Power electronics
2.3 Semiconductor Lasers and LEDs
2.4 Optoelectronics and integrated photonics
3. Physics and Emerging Devices
3.1 Semiconductor physics
3.2 Organic semiconductors and flexible electronics
3.3 Other novel device concepts including ferroelectrics, spintronics, superconductivity etc.
3.4 Quantum electronic and photonic devices
06月01日
2022
06月03日
2022
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