In order to further increase audience and scientific impact, the two sister conferences ULIS and EUROSOI have decided to merge in 2015 and the first joint EUROSOI-ULIS event was a sucess. The aim of the EUROSOI-ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale semiconductor-on-insulator and silicon-compatible devices. Papers corresponding to the More Moore, More than Moore and Beyond CMOS domains (alternative semiconductor and dielectric materials, innovative devices, circuit and system design, etc) are highly encouraged.
Topics include, but are not limited to
Advanced SOI materials and wafers
New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other 2D materials
Properties of ultra-thin films and buried oxides, defects, interface quality
Thin gate dielectrics: high-k materials for switches and memory
Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory (DRAM, Non-Volatile, SRAM, ReRAM...) applications
Physics mechanisms and innovative SOI-like devices
Alternative transistor architectures including FDSOI, DGSOI, FinFET, MuGFET, vertical MOSFET, Nanowires, FeFET and tunnel FET structures, MEMS/NEMS, Beyond-CMOS nanodevices
New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain for Sensing, Energy harvesting, RF, High voltage, Imagers, Electronic cooling, etc.
CMOS scaling perspectives; device/circuit level performance evaluation; switches and memory scaling
Three-dimensional integration of devices and circuits, heterogeneous integration
Transport phenomena, compact modeling, device simulation, front- and back-end fabrication process simulation
Advanced test structures and characterization techniques, parameter extraction, reliability and variability issues for new materials and novel devices
01月25日
2016
01月27日
2016
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